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Novel devices and emerging technologies

E. Gnani, A. Gnudi, M. Rudan.

In order to maintain also in the future the pace of growth of the electronic industry observed in the last few decades, new materials, new technologies and new device concepts are required to replace the standard silicon CMOS technology, which has been the workhorse in digital circuits for a long time and is now approaching its scalability limits. The projects described in this section, carried out in the framework of National and European research programs and in cooperation with the leading European industrial and research institutions, operate in this direction.

Carbon-based nanoelectronic devices
Gnudi-graphene Carbon has been recently investigated in its various forms, i.e., graphene or carbon nanotubes, as it is considered one of the most promising materials for replacing silicon in high-speed nanoelectronics. Novel device concepts are under investigation.
III-V semiconductor transistors
iii-v-mos-mobility In this activity, accurate device simulation methods and models, integrated into TCAD tools, are devised for the successful introduction of optimized device designs based on III-V n-MOSFETs in CMOS technology at and beyond the ITRS 14nm node.
Tunnel-effect transistors
tunnel-gnani In order to scale down the power dissipation in CMOS circuits, transistors with low threshold voltage and high subthreshold current slope are necessary. Tunnel-based Field Effect Transistors (TFETs) are one of the open possibilities.
Non-conventional Memories
Rudan 1 New classes of non-volatile memories (NVM) are being investigated to fill the gap between Hard-Disk Drives (HDD) and DRAM main memories. Promising types of NVM are phase-change memories and resistive memories.