Home Staff

Baccarani Giorgio Position Faculty -> Full Professor Location Arces - Mars Phone Phone: 0512095412 FAX: 0512095410 Mail This e-mail address is being protected from spam bots, you need JavaScript enabled to view it     Website Didattica    Publications L. Silvestri, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, "Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress", 2010 11th Conference on Ultimate Integration on Silicon (ULIS) 421 S. Poli, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, "Computational study of the ultimate scaling limits of CNT tunneling devices", 2008 Jan IEEE Trans. on Electron Devices 55 1 242 L. Silvestri, S. Reggiani, E. Gnani, A.Gnudi, M. Rudan, G. Baccarani, "Effects of channel orientations, high-k gate stacks and stress on UTB-FETs: a QDD simulation study", 2008 1st International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS) 421 S. Poli, M. G. Pala, T. Poiroux, S. Deleonibus, G. Baccarani, "Size dependence of surface- roughness-limited mobility in Silicon-nanowire FETs", 2008 IEEE Transactions on Electron Devices 55 11 2968 242 R. Grassi, S. Poli, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani, "Tight-binding and effective-mass modeling of armchair carbon nanoribbon FETs", 2008 ULIS 2008 Udine 242 L. Silvestri, S. Reggiani, E. Gnani, A. Gnudi, G. Baccarani, "Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation", 2008 9th Conference on Ultimate Integration on Silicon (ULIS) 421 S. Poli, S. Reggiani, A. Gnudi, M. Rudan, G. Baccarani, "Effective-mass modeling of carbon nanotube FETs", 2007 1st Italian Workshop on Carbon Nanotubes for Electronics Applications, ICNTE 242 R. Grassi, S. Poli, S. Reggiani, A. Gnudi, M. Rudan, G. Baccarani, "Phonon scattering effects in CNT-FETs with different dimensions and dielectric materials", 2007 ESSDERC 2007 Munich 242 S. Reggiani, L. Silvestri, A. Cacciatori, E. Gnani, A. Gnudi, G. Baccarani, "Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions", 2007 International Electron Devices Meeting (IEDM) Washington DC 421 E. Gnani, A. Marchi, S. Reggiani, M. Rudan, G. Baccarani, "Comparison of device performance and scaling capability of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors", 2006 Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2006), Monterey CA, pp. 24-26, Sept. 6-8, 2006. E. Gnani, A. Marchi, S. Reggiani, M. Rudan, G. Baccarani, "Comparison of device performance and scaling properties of cylindrical-nanowire (CNW) and carbon-nanotube (CNT) transistors", 2006 Book of Abstracts of the 28th International Conference on the Physics of Semiconductors (ICPS-28), p. 338, W. Jantsch and F. Schäffler, Vienna (Austria), July 24-28, 2006. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "Design Considerations and Comparative Investigation of Ultra-Thin SOI, Double-Gate and Cylindrical Nanowire FETs", 2006 ESSDERC 2006, Montreaux, Switzerland, Sept. 18-22, 2006. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "Effects of high-k (HfO2) gate dielectric in Double-Gate and Cylindrical-Nanowire MOSFETs scaled to the ultimate technology nodes", 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, June 11-12, 2006. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "Effects of the Band-Structure Modification in Silicon Nanowires with Small Diameters", 2006 ESSDERC 2006, Montreaux, Switzerland, Sept. 18-22, 2006. S. Reggiani, E. Gnani, M. Rudan, G. Baccarani, "Effects of the low-field mobility in Single-Gate and Double-Gate Ultrathin-Body MOSFETs scaled to the ultimate technology nodes", 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, June 11-12, 2006. S. Reggiani, E. Gnani, M. Rudan, G. Baccarani, S. Bychikhin, J. Kuzmik, D. Pogany, E. Gornik, M. Denison, N. Jensen, G. Groos, M. Stecher, "Experimental investigation on carrier dynamics at the thermal breakdown", 2006 Book of Abstracts of the 28th International Conference on the Physics of Semiconductors (ICPS-28), p. 366, W. Jantsch and F. Schäffler, Vienna (Austria), July 24-28, 2006. M. Rudan, E. Gnani, S. Reggiani, G. Baccarani, "Extension of the R-Sigma method to any order", 2006 Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE-11), p. 295, H. Kosina and S. Selberherr Eds., Vienna (Austria), May 25-27, 2006. A. Marchi, E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs", 2006 Solid State Electronics vol. 50, n. 1, pp. 78-86, 2006. M. Rudan, S. Reggiani, E. Gnani, G. Baccarani, C. Corvasce, M. Ciappa, M. Stecher, D. Pogany, E. Gornik, "Physical Models for Smart-Power Devices", 2006 Proc. of the 13th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDESS 2006), pp. 28-33, A. Napieralski Ed., Gdynia, Poland, June 22-24, 2006. (invited). E. Gnani, A. Marchi, S. Reggiani, M. Rudan, G. Baccarani, "Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon nanotube FETs", 2006 Solid-State Electronics, Vol. 50, n. 4, pp. 709-715, April 2006. M. Rudan, S. Reggiani, E. Gnani, G. Baccarani, C. Corvasce, D. Barlini, M. Ciappa, W. Fichtner, M. Denison, N. Jensen, G. Groos, M. Stecher, "Theory and experimental validation of a new analytical model for the position-dependent Hall voltage in devices with arbitrary aspect ratio", 2006 IEEE Transactions on Electron Devices, vol. 53, no. 2, pp. 314-322, 2006. M. Rudan, E. Gnani, S. Reggiani, G. Baccarani, "A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I - Single Particle Dynamics", 2005 IEEE Transactions on Nanotechnology, vol. 4, no. 5, pp. 495-502, September 2005. M. Rudan, E. Gnani, S. Reggiani, G. Baccarani, "A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II - Collective Transport", 2005 IEEE Transactions on Nanotechnology, vol. 4, no. 5, pp. 503-509, September 2005. S. Reggiani, E. Gnani, M. Rudan, G. Baccarani, S. Bychikhin, J. Kuzmik, D. Pogany, E. Gornik, M. Denison, N. Jensen, G. Groos, M. Stecher, "A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique", 2005 IEEE Electron Device Letters, vol. 26, no. 12, pp. 916-918, December 2005. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "A quantum mechanical analysis of the electrostatics in multiple-gate FETs", 2005 Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), Tokyo (Japan), pp. 291-294, September 1-3, 2005. M. Rudan, S. Reggiani, E. Gnani, G. Baccarani, C. Corvasce, D. Barlini, M. Ciappa, W. Fichtner, M. Denison, N. Jensen, G. Groos, M. Stecher, "Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices", 2005 Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), pp. 565-568, Grenoble, September 13-15, 2005. A. Marchi, E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "Investigating the performance limits of silicon nanowires and carbon nanotube FETs", 2005 th International Conference on Ultimate Integration of Silicon (ULIS 2005), pp. 99-102, Bologna, 7-9 April 2005. S. Reggiani, E. Gnani, M. Rudan, G. Baccarani, C. Corvasce, D. Barlini, M. Ciappa, W. Fichtner, M. Denison, N. Jensen, G. Groos, M. Stecher, "Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures", 2005 IEEE Transactions on Electron Devices, vol. 52, no. 10, pp. 2290-2299, October 2005. G. Baccarani, E. Gnani, "Memory Devices, Nonvolatile", 2005 Enciclopedia of Condensed Matter Physics, Eds.: F. Bassani, J. Liedl, P. Wyder Elsevier, pp. 337-347, 2005 (invited). G. Baccarani, E. Gnani, "Memory Devices, Volatile", 2005 Enciclopedia of Condensed Matter Physics, Eds.: F. Bassani, J. Liedl, P. Wyder Elsevier, pp. 337-347, 2005 (invited). E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs", 2005 Journal of Computational Electronics, vol. 4, pp. 71-74, 2005. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs", 2005 Journal of Computational Electronics, Vol. 4, pp. 71-74, 2005. S. Reggiani, E. Gnani, M. Rudan, G. Baccarani, S. Bychikhin, J. Kuzmik, D. Pogany, E. Gornik, M. Denison, N. Jensen, G. Groos, M. Stecher, "Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments", 2005 Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), pp. 411-414, Grenoble, September 11-15, 2005. E. Gnani, A. Marchi, S. Reggiani, M. Rudan, G. Baccarani, "Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs", 2005 Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), pp. 161-164, Grenoble, September 13-15, 2005. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "A new approach to the self-consistent solution of the Schrödinger-Poisson equation in nanowire MOSFETs", 2004 Proc. of the 2004 European Solid-State Device Research Conference (ESSDERC 2004), pp. 177-180, Leuven, Belgium, 21-23 Sept. 2004. S. Reggiani, M. Rudan, E. Gnani, G. Baccarani, C. Corvasce, D. Barlini, M. Ciappa, W. Fichtner, M. Denison, N. Jensen, G. Groos, M. Stecher, "Experimental extraction of the electron impact-ionization coefficient at large operating temperatures", 2004 Proceedings of the IEEE International Electron Device Meeting (IEDM 2004), pp. 407-410, S. Francisco, California, 13-15 December, 2004. S. Reggiani, M. Rudan, E. Gnani, G. Baccarani, "Investigation about the high temperature impact-ionization coefficient in silicon", 2004 Proc. of the 2004 European Solid-State Device Research Conference (ESSDERC 2004), pp. 245-248, Leuven, Belgium, 21-23 Sept. 2004. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "On the electrostatics of double-gate and cylindrical nanowire MOSFETs", 2004 Proc. of the International Workshop on Computational Electronics (IWCE-10), pp. 245-248, M. Lundstrom Ed., West Lafayette, Indiana, Oct. 24-27, 2004. M. Rudan, E. Gnani, S. Reggiani, G. Baccarani, "The Density-Gradient correction as a disguised pilot wave of de Broglie", 2004 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), Munich, Germany Eds.: G. Wachutka and G. Schrag pp. 13-16, Sept. 2-4, 2004. A. Bevilacqua, A. Lanza, G. Baccarani, R. Rovatti, "A Single scan algorithm for connected components labeling in a traffic monitoring application", 2003 Lecture Notes in Computer Science (LNCS), Vol. 2749 (2003), 677-684 M. Rudan, S. Reggiani, E. Gnani, G. Baccarani, "Determination of the Hall Voltage in Devices with Arbitrary Aspect Ratio and Probe Position", 2003 Proc. of the 2003 European Solid-State Device Research Conference (ESSDERC 2003), pp. 355-358, Estoril, Portugal, 16-18 Sept. 2003. D. Guermandi, E. Franchi, A. Gnudi, G. Baccarani, "A CMOS Programmable Divider for RF Multi-standard Frequency Synthesizers", 2002 Proc. of the 2002 European Solid-State Circuit Conference (ESSCIRC 2002), pp. 843-846, Firenze, Italy, 24-26 Sept. 2002. 235 S. Reggiani, M. Valdinoci, L. Colalongo, M. Rudan, G. Baccarani, A. Stricker, F. Illien, N. Felber, W. Fichtner, L. Zullino, "Electron and Hole Mobility in Silicon at Large Operating Temperatures: Part I - Bulk Mobility", 2002 IEEE Trans. on Electron Devices, vol. ED-49, n. 3, pp. 638-646, March 2002. E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "Extraction Method for the Impact-Ionization Multiplication Factor in Silicon at Large Operating Temperatures", 2002 Proc. of the 2002 European Solid-State Device Research Conference (ESSDERC 2002), pp. 227-230, Firenze, Italy, 24-26 Sept. 2002. S. Reggiani, M. Valdinoci, L. Colalongo, M. Rudan, G. Baccarani, A. Stricker, F. Illien, N. Felber, W. Fichtner, S. Mettler, S. Lindenkreuz, L. Zullino, "Surface Mobility in Silicon at Large Operating Temperature", 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, pp.15-20, Sept. 4-6, 2002. (Invited).